Please use this identifier to cite or link to this item: https://doi.org/10.1021/cm801388w
DC FieldValue
dc.titleAxial-junction nanowires of Ag2Te-Ag as a memory element
dc.contributor.authorBatabyal, S.K.
dc.contributor.authorVittal, J.J.
dc.date.accessioned2014-10-16T08:21:07Z
dc.date.available2014-10-16T08:21:07Z
dc.date.issued2008-09-23
dc.identifier.citationBatabyal, S.K., Vittal, J.J. (2008-09-23). Axial-junction nanowires of Ag2Te-Ag as a memory element. Chemistry of Materials 20 (18) : 5845-5850. ScholarBank@NUS Repository. https://doi.org/10.1021/cm801388w
dc.identifier.issn08974756
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93161
dc.description.abstractSilver telluride nanowires incorporating silver were prepared by green chemical method in aqueous solution. First, Ag2TeO3 was prepared from aqueous solutions of sodium tellurite (Na2TeO 3) and silver nitrate (AgNO3). At room temperature in basic solution, α-D-glucose reduces Ag2TeO3 to generate silver nanocrystals, whereas solvothermal reaction of Ag 2TeO3 with α-D-glucose at 165°C generates Te, Ag, or Ag2Te-Ag axial hetrojunction nanowires depending upon the pH of the reaction mixture. These heterojunction nanowires, which exhibit electrical bistability at low voltage, can be used as data storage devices. © 2008 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/cm801388w
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1021/cm801388w
dc.description.sourcetitleChemistry of Materials
dc.description.volume20
dc.description.issue18
dc.description.page5845-5850
dc.description.codenCMATE
dc.identifier.isiut000259275000017
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.