Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2tc00033d
Title: 6,13-Dicyano pentacene-2,3:9,10-bis(dicarboximide) for solution-processed air-stable n-channel field effect transistors and complementary circuit
Authors: Chang, J.
Qu, H.
Ooi, Z.-E.
Zhang, J.
Chen, Z.
Wu, J. 
Chi, C. 
Issue Date: 21-Jan-2013
Citation: Chang, J., Qu, H., Ooi, Z.-E., Zhang, J., Chen, Z., Wu, J., Chi, C. (2013-01-21). 6,13-Dicyano pentacene-2,3:9,10-bis(dicarboximide) for solution-processed air-stable n-channel field effect transistors and complementary circuit. Journal of Materials Chemistry C 1 (3) : 456-462. ScholarBank@NUS Repository. https://doi.org/10.1039/c2tc00033d
Abstract: Aromatic diimides have attracted much attention due to their unique properties and potential applications for n-channel organic field effect transistors (OFETs). In this study, N,N′-dialkyl-6,13-dicyano pentacene-2,3:9,10-bis(dicarboximide) (1) was synthesized and used in n-channel OFETs. The photophysical, electrochemical and thermal properties of 1 were investigated. The low LUMO energy level (-4.15 eV) located within the air stability window ensures air-stable n-channel operation. Solution-processed top-contact thin film transistors based on such linear aromatic dicarboximide showed typical n-channel characteristics with a high electron mobility of up to 0.08 cm2 V-1 s-1 and a high I on/Ioff ratio of 106 to 107. The devices exhibited good air stability when exposed to air for several months. Complementary inverters based on n-type 1 and p-type TIPS-pentacene were fabricated, which showed a maximum voltage gain (-dVOUT/dV IN) of 57. © The Royal Society of Chemistry 2013.
Source Title: Journal of Materials Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/92917
ISSN: 20507534
DOI: 10.1039/c2tc00033d
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