Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/91504
Title: High-surface-area SnO2: A novel semiconductor-oxide gas sensor
Authors: Li, G.-J. 
Kawi, S. 
Keywords: H2 gas sensor
High surface area
Semiconductor oxide
SnO2
Surfactant
Issue Date: Feb-1998
Source: Li, G.-J.,Kawi, S. (1998-02). High-surface-area SnO2: A novel semiconductor-oxide gas sensor. Materials Letters 34 (1-2) : 99-102. ScholarBank@NUS Repository.
Abstract: High surface area SnO2 sensor materials were systematically synthesized by a surfactant incorporating method. After calcination at 723 K, a high BET surface area of 156.8 m2/g was obtained. The sensing properties of the high surface area SnO2 material were studied using H2 as the probing gas. It is found that a linear relationship exists between sensor surface area and its sensitivity to H2. © 1998 Elsevier Science B.V.
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/91504
ISSN: 0167577X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

45
checked on Mar 10, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.