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|Title:||Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth|
|Citation:||Mok, K.R.C.,Colombeau, B.,Jaraiz, M.,Castrillo, P.,Rubio, J.E.,Pinacho, R.,Srinivasan, M.P.,Benistant, F.,Martin-Bragado, I.,Hamilton, J.J. (2006). Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth. Materials Research Society Symposium Proceedings 912 : 99-104. ScholarBank@NUS Repository.|
|Abstract:||Preamorphization implant (PAT) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultrashallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI. © 2006 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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