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|Title:||Angled XPS analysis of low-k dielectric surfaces after cleaning|
X-ray photoelectron spectroscopy
|Source:||Tan, Y.S.,Chooi, S.Y.M.,Sin, C.-Y.,Ee, P.-Y.,Srinivasan, M.P.,Pehkonen, S.O. (2005). Angled XPS analysis of low-k dielectric surfaces after cleaning. Diffusion and Defect Data Pt.B: Solid State Phenomena 103-104 : 331-336. ScholarBank@NUS Repository.|
|Abstract:||The N2/H2 plasma treatment is relatively poor in removing CuF2 contaminants and oxidized carbon contaminants on the dielectric sidewalls in comparison to other cleaning methods. Stripper A is very effective in removing any CuF2 contaminants on Cu surface both at the trench bottoms and dielectric sidewalls. However, stripper A causes carbon contaminants on the dielectric sidewalls to increase. Stripper B has a similar effectiveness as stripper A in removing carbon contaminants, but it is half as effective as stripper A in removing Cu, O, F contaminants. A two-step cleaning process that uses H/H2 plasma treatment followed by wet cleaning helps to improve contaminant removal. N2/H2 plasma treatment followed by DHF cleaning removes the largest amount of Cu(2+) contaminants from both the trench bottoms and dielectric sidewalls, especially CuO. N2/H2 plasma treatment followed by stripper A has been shown to be the best cleaning process among all the various cleaning methods evaluated here.|
|Source Title:||Diffusion and Defect Data Pt.B: Solid State Phenomena|
|Appears in Collections:||Staff Publications|
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