Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/90518
Title: Angled XPS analysis of low-k dielectric surfaces after cleaning
Authors: Tan, Y.S.
Chooi, S.Y.M.
Sin, C.-Y.
Ee, P.-Y.
Srinivasan, M.P. 
Pehkonen, S.O. 
Keywords: Cleaning
Contamination
Low-k dielectric
X-ray photoelectron spectroscopy
Issue Date: 2005
Source: Tan, Y.S.,Chooi, S.Y.M.,Sin, C.-Y.,Ee, P.-Y.,Srinivasan, M.P.,Pehkonen, S.O. (2005). Angled XPS analysis of low-k dielectric surfaces after cleaning. Diffusion and Defect Data Pt.B: Solid State Phenomena 103-104 : 331-336. ScholarBank@NUS Repository.
Abstract: The N2/H2 plasma treatment is relatively poor in removing CuF2 contaminants and oxidized carbon contaminants on the dielectric sidewalls in comparison to other cleaning methods. Stripper A is very effective in removing any CuF2 contaminants on Cu surface both at the trench bottoms and dielectric sidewalls. However, stripper A causes carbon contaminants on the dielectric sidewalls to increase. Stripper B has a similar effectiveness as stripper A in removing carbon contaminants, but it is half as effective as stripper A in removing Cu, O, F contaminants. A two-step cleaning process that uses H/H2 plasma treatment followed by wet cleaning helps to improve contaminant removal. N2/H2 plasma treatment followed by DHF cleaning removes the largest amount of Cu(2+) contaminants from both the trench bottoms and dielectric sidewalls, especially CuO. N2/H2 plasma treatment followed by stripper A has been shown to be the best cleaning process among all the various cleaning methods evaluated here.
Source Title: Diffusion and Defect Data Pt.B: Solid State Phenomena
URI: http://scholarbank.nus.edu.sg/handle/10635/90518
ISBN: 390845106X
ISSN: 10120394
Appears in Collections:Staff Publications

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