Please use this identifier to cite or link to this item: https://doi.org/10.1021/jz4005416
Title: Stable organic monolayers on oxide-free silicon/germanium in a supercritical medium: A new route to molecular electronics
Authors: Puniredd, S.R.
Jayaraman, S.
Yeong, S.H.
Troadec, C.
Srinivasan, M.P. 
Keywords: ballistic electron emission microscopy
covalent molecular assembly
molecular electronics
nonoxidized silicon surface
organic monolayer
supercritical carbon dioxide
Issue Date: 2-May-2013
Citation: Puniredd, S.R., Jayaraman, S., Yeong, S.H., Troadec, C., Srinivasan, M.P. (2013-05-02). Stable organic monolayers on oxide-free silicon/germanium in a supercritical medium: A new route to molecular electronics. Journal of Physical Chemistry Letters 4 (9) : 1397-1403. ScholarBank@NUS Repository. https://doi.org/10.1021/jz4005416
Abstract: Oxide-free Si and Ge surfaces have been passivated and modified with organic molecules by forming covalent bonds between the surfaces and reactive end groups of linear alkanes and aromatic species using single-step deposition in supercritical carbon dioxide (SCCO2). The process is suitable for large-scale manufacturing due to short processing times, simplicity, and high resistance to oxidation. It also allows the formation of monolayers with varying reactive terminal groups, thus enabling formation of nanostructures engineered at the molecular level. Ballistic electron emission microscopy (BEEM) spectra performed on the organic monolayer on oxide-free silicon capped by a thin gold layer reveals for the first time an increase in transmission of the ballistic current through the interface of up to three times compared to a control device, in contrast to similar studies reported in the literature suggestive of oxide-free passivation in SCCO2. The SCCO2 process combined with the preliminary BEEM results opens up new avenues for interface engineering, leading to molecular electronic devices. © 2013 American Chemical Society.
Source Title: Journal of Physical Chemistry Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/90206
ISSN: 19487185
DOI: 10.1021/jz4005416
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