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https://doi.org/10.1103/PhysRevB.83.201302
DC Field | Value | |
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dc.title | Origin of the apparent (2×1) topography of the Si(100)-c(4×2) surface observed in low-temperature STM images | |
dc.contributor.author | Manzano, C. | |
dc.contributor.author | Soe, W.-H. | |
dc.contributor.author | Kawai, H. | |
dc.contributor.author | Saeys, M. | |
dc.contributor.author | Joachim, C. | |
dc.date.accessioned | 2014-10-09T06:56:48Z | |
dc.date.available | 2014-10-09T06:56:48Z | |
dc.date.issued | 2011-05-04 | |
dc.identifier.citation | Manzano, C., Soe, W.-H., Kawai, H., Saeys, M., Joachim, C. (2011-05-04). Origin of the apparent (2×1) topography of the Si(100)-c(4×2) surface observed in low-temperature STM images. Physical Review B - Condensed Matter and Materials Physics 83 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.83.201302 | |
dc.identifier.issn | 10980121 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/89701 | |
dc.description.abstract | Low-temperature scanning tunneling microscope (STM) images of the Si(100) surface showing apparent (2×1) atom dimer lines have recently been reported. Using experimental and theoretical approaches, it is demonstrated how those (2×1)-like images result from a c(4×2) surface reconstruction imaged at high bias voltages. In the STM junction, the surface contribution of 3px surface-state electronic resonances relative to the 3p z states is bias voltage dependent. The apparent (2×1) STM images result from an increase in the number of bulk Si electronic channels amplifying Si(100)-c(4×2) surface 3px surface states contribution to the tunneling current with respect to the one of 3pz states. © 2011 American Physical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.83.201302 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CHEMICAL & BIOMOLECULAR ENGINEERING | |
dc.description.doi | 10.1103/PhysRevB.83.201302 | |
dc.description.sourcetitle | Physical Review B - Condensed Matter and Materials Physics | |
dc.description.volume | 83 | |
dc.description.issue | 20 | |
dc.description.page | - | |
dc.description.coden | PRBMD | |
dc.identifier.isiut | 000290229900001 | |
Appears in Collections: | Staff Publications |
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