Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3609318

Title:	Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide
Authors:	Xie, L. Wang, X. Mao, H. Wang, R. Ding, M. Wang, Y. Zyilmaz, B. Ping Loh, K. Wee, A.T.S. Ariando Chen, W.
Issue Date:	4-Jul-2011
Citation:	Xie, L., Wang, X., Mao, H., Wang, R., Ding, M., Wang, Y., Zyilmaz, B., Ping Loh, K., Wee, A.T.S., Ariando, Chen, W. (2011-07-04). Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide. Applied Physics Letters 99 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3609318
Abstract:	We demonstrate effective non-destructive p-type doping of graphene via surface modification with molybdenum trioxide (MoO3) thin film using electrical transport measurements. The p-type doping via MoO3 modification of graphene leads to the downward shift of Fermi level towards the valence band. MoO3 modified graphene retains its high charge carrier mobility, facilitating the observation of quantum Hall effect. In-situ ultraviolet photoelectron spectroscopy studies also show that air exposure of MoO3 modified graphene reduces the doping efficiency. © 2011 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/88822
ISSN:	00036951
DOI:	10.1063/1.3609318
Appears in Collections:	Staff Publications

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