Please use this identifier to cite or link to this item: https://doi.org/10.1021/la036089e
Title: Controlled grafting of well-defined epoxide polymers on hydrogen-terminated silicon substrates by surface-initiated ATRP at ambient temperature
Authors: Yu, W.H.
Kang, E.T. 
Neoh, K.G. 
Issue Date: 14-Sep-2004
Citation: Yu, W.H., Kang, E.T., Neoh, K.G. (2004-09-14). Controlled grafting of well-defined epoxide polymers on hydrogen-terminated silicon substrates by surface-initiated ATRP at ambient temperature. Langmuir 20 (19) : 8294-8300. ScholarBank@NUS Repository. https://doi.org/10.1021/la036089e
Abstract: Controlled grafting of well-defined epoxide polymer brushes on the hydrogen-terminated Si(100) substrates (Si-H substrates) was carried out via the surface-initiated atom-transfer radical polymerization (ATRP) at room temperature. Thus, glycidyl methacrylate (GMA) polymer brushes were prepared by ATRP from the α-bromoester functionalized Si-H surface. Kinetic studies revealed a linear increase in GMA polymer (PGMA) film thickness with reaction time, indicating that chain growth from the surface was a controlled "living" process. The graft polymerization proceeded more rapidly in the dimethylformamide/water (DMF/H 2O) mixed solvent medium than in DMF, leading to much thicker PGMA growth on the silicon surface in the former medium. The chemical composition of the GMA graft-polymerized silicon (Si-g-PGMA) surfaces were characterized by X-ray photoelectron spectroscopy (XPS). The fact that the epoxide functional groups of the grafted PGMA were preserved quantitatively was revealed in the reaction with ethylenediamine. The "living" character of the PGMA chain end was further ascertained by the subsequent growth of a poly(pentafluorostyrene) (PFS) block from the Si-g-PGMA surface, using the PGMA brushes as the macroinitiators.
Source Title: Langmuir
URI: http://scholarbank.nus.edu.sg/handle/10635/88698
ISSN: 07437463
DOI: 10.1021/la036089e
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