Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssr.201004473
Title: Thin film bilayers of multiferroic bismuth ferrite on Pt-Si substrate
Authors: Wu, J. 
Wang, J. 
Xiao, D.
Zhu, J.
Keywords: BiFeO3
Impedance
Multiferroics
Quartz substrate
Thin films
Issue Date: Feb-2011
Citation: Wu, J., Wang, J., Xiao, D., Zhu, J. (2011-02). Thin film bilayers of multiferroic bismuth ferrite on Pt-Si substrate. Physica Status Solidi - Rapid Research Letters 5 (2) : 83-85. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201004473
Abstract: A multiferroics/multiferroics BiFeO3/Bi0.90La0.10Fe0.90Zn0.10O3 (BFO/BLFZO) bilayer was deposited on Pt/TiO2/SiO2/Si substrates by radio frequency sputtering. The BLFZO layer strongly affects the phase purity, orientation growth, and leakage current of BFO layer. The bilayered capacitor exhibits a high dielectric permittivity of ∼162 and an improved magnetic behavior of 2Ms ∼ 34.6 emu/cm3, together with an excellent fatigue endurance. A remanent polarization of 2Pr ∼ 116.2 μC/cm2 for the bilayered capacitor is better than those of reported BFO bilayers. The impedance study indicates that lower freely mobile charges are responsible for the improved electrical behavior of the BFO/BLFZO bilayer. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi - Rapid Research Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86983
ISSN: 18626254
DOI: 10.1002/pssr.201004473
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