Please use this identifier to cite or link to this item: https://doi.org/10.1107/S1600576713031191
Title: Unit-cell determination of epitaxial thin films based on reciprocal-space vectors by high-resolution X-ray diffractometry
Authors: Yang, P. 
Liu, H.
Chen, Z.
Chen, L.
Wang, J. 
Keywords: Bravais lattice
crystal structure determination
epitaxial thin films
high-resolution X-ray diffractometry
Niggli-reduced cells
reciprocal-space vectors
Issue Date: Feb-2014
Citation: Yang, P., Liu, H., Chen, Z., Chen, L., Wang, J. (2014-02). Unit-cell determination of epitaxial thin films based on reciprocal-space vectors by high-resolution X-ray diffractometry. Journal of Applied Crystallography 47 (1) : 402-413. ScholarBank@NUS Repository. https://doi.org/10.1107/S1600576713031191
Abstract: A new approach, based on reciprocal-space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry. The lattice parameters of single-crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of the raw unit cell, and subsequent conversion to the Niggli unit cell and the Bravais unit cell by matrix calculation. Two methods of this procedure are described: in three-dimensional reciprocal space and in six-dimensional G 6 space. The estimation of standard error in the lattice parameters derived by this new approach is discussed. The whole approach is illustrated by examples of experimental data. The error of the best result is 0.0006 Å for the lattice parameter of indium tin oxide film. This new RSV method provides a practical and concise route to the crystal structure study of epitaxial thin films and could also be applied to the investigation of surface and interface structures. © 2014 International Union of Crystallography.
Source Title: Journal of Applied Crystallography
URI: http://scholarbank.nus.edu.sg/handle/10635/86972
ISSN: 00218898
DOI: 10.1107/S1600576713031191
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