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|Title:||SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion|
|Citation:||Huang, Y.,Zhu, L.,Ong, K.,Teo, H.,Chen, S.,Hua, Y.,Shen, M.,Gong, H. (2012). SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 290-292. ScholarBank@NUS Repository.|
|Abstract:||Threshold Voltage (Vt) of MOSFET controls transistor's on and off state. Vt is usually depends on gate oxide thickness and operating temperature. Systematic failure analysis for a Vt shift issue, should also consider the channel doping which affects the inversion layer formation. In this article, the failure case of a shift in the Vt of a Power MOSFET V is studied. Secondary Ion Mass Spectrometry (SIMS) is found to be the most direct way for detecting any abnormality in the channel doping profiles. A comprehensive simulation is performed showing that the Phosphorus level diffusion from substrate was so high that it affects the doping concentration of channel. Copyright © 2012 ASM International® All rights reserved.|
|Source Title:||Conference Proceedings from the International Symposium for Testing and Failure Analysis|
|Appears in Collections:||Staff Publications|
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