Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2008.4585661
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dc.titleHigh-coercivity SmCo5 thin films deposited on MgO and glass substrates
dc.contributor.authorZhang, L.N.
dc.contributor.authorDing, J.
dc.contributor.authorHu, J.F.
dc.contributor.authorChen, J.S.
dc.date.accessioned2014-10-07T09:56:07Z
dc.date.available2014-10-07T09:56:07Z
dc.date.issued2008
dc.identifier.citationZhang, L.N., Ding, J., Hu, J.F., Chen, J.S. (2008). High-coercivity SmCo5 thin films deposited on MgO and glass substrates. 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 : 1038-1042. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2008.4585661
dc.identifier.isbn9781424415731
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86899
dc.description.abstractIn this work, both SmCo5 thin films with a (11 2 0) texture on single crystal MgO (100) and glass substrates, respectively, have shown high in-plane coercivity and in-plane anisotropy after deposition at a relatively low substrate temperature of 400°C. An epitaxial growth was achieved on the MgO (100) single crystal, while polycrystalline and nearly isotropic Cr underlayer was found on the glass substrate. A comparison study showed different coercivity mechanisms of the two SmCo5 films. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/INEC.2008.4585661
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1109/INEC.2008.4585661
dc.description.sourcetitle2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
dc.description.page1038-1042
dc.identifier.isiut000259893500238
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