Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3192224
Title: Ferromagnetism in ZnO doped with non-magnetic elements
Authors: Ding, J. 
Ma, Y.W.
Keywords: Ferromagnetism in zno
Issue Date: 2009
Source: Ding, J.,Ma, Y.W. (2009). Ferromagnetism in ZnO doped with non-magnetic elements. AIP Conference Proceedings 1150 : 117-121. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3192224
Abstract: Recently, extensive research has been carried out on ZnO-based dilute magnetic semiconductor (DMS). In this paper, we present that room temperature ferromagnetism can be induced by diffusion of reactive elements (Ti, Al and Zn) into ZnO film. Some of these diffused reactive atom/ions occupy the interstitial sites of ZnO and cause the lattice expansion in ZnO. Charge transfer between the reactive atoms/ions and Zn occurs, which may be the cause of ferromagnetism. On the other hand, no lattice expansion is observed when the non-reactive elements (Ta, Ag and Au) diffuse into ZnO and no charge transfer occurs as well. These nonreactive/ZnO films do not show ferromagnetism. © 2009 American Institute of Physics.
Source Title: AIP Conference Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/86886
ISBN: 9780735406872
ISSN: 0094243X
DOI: 10.1063/1.3192224
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