Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10832-006-9892-2
Title: Ferroelectric properties of heterolayered lead zirconate titanate thin films
Authors: Kartawidjaja, F.C. 
Zhou, Z. 
Wang, J. 
Keywords: Domain pinning
Ferroelectric behaviors
Heterolayered PZT thin films
Sol-gel
Issue Date: Jul-2006
Source: Kartawidjaja, F.C., Zhou, Z., Wang, J. (2006-07). Ferroelectric properties of heterolayered lead zirconate titanate thin films. Journal of Electroceramics 16 (4) : 425-430. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-006-9892-2
Abstract: Heterolayered Pb(Zr1 - x Ti x )O3 thin films consisting of alternating PbZr0.7Ti0.3O3 and PbZr0.3Ti0.7O3 layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600-700°C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650°C, which exhibits a remanent polarization of 47.7 μC/cm 2 and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement. © Springer Science + Business Media, LLC 2006.
Source Title: Journal of Electroceramics
URI: http://scholarbank.nus.edu.sg/handle/10635/86885
ISSN: 13853449
DOI: 10.1007/s10832-006-9892-2
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