Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4795011
Title: Effect of oxygen vacancies on the electronic structure and transport properties of SrRuO3 thin films
Authors: Lu, W.
He, K.
Song, W.
Sun, C.-J.
Chow, G.M. 
Chen, J.-S. 
Issue Date: 7-May-2013
Citation: Lu, W., He, K., Song, W., Sun, C.-J., Chow, G.M., Chen, J.-S. (2013-05-07). Effect of oxygen vacancies on the electronic structure and transport properties of SrRuO3 thin films. Journal of Applied Physics 113 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4795011
Abstract: Epitaxial SrRuO3 films were grown under different oxygen partial pressures inducing different amounts of oxygen vacancies. In spite of microstructural disorders, a considerable improvement in the conductivity was observed at ambient temperature with increasing the oxygen vacancies. The oxygen vacancies are responsible for the conductivity improvement by enhancing the orbital overlap between Ru dz 2 and O pz orbitals. The finding indicates that the oxygen vacancy plays an important role in determining the transport properties of perovskite oxides, by modifying their electronic structures. © 2013 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86874
ISSN: 00218979
DOI: 10.1063/1.4795011
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