Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3460108
Title: ZnO as a buffer layer for growth of BiFeO3 thin films
Authors: Wu, J. 
Wang, J. 
Issue Date: 1-Aug-2010
Citation: Wu, J., Wang, J. (2010-08-01). ZnO as a buffer layer for growth of BiFeO3 thin films. Journal of Applied Physics 108 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3460108
Abstract: Multiferroic BiFeO3 thin film was grown on the ZnO-buffered Pt/TiO2/SiO2/Si (100) substrate by off-axis radio frequency magnetron sputtering, where the ZnO buffer layer gave rise to a strong (110) texture for the BiFeO3 thin film. The resulting BiFeO 3/ZnO thin film exhibits diode-like and resistive hysteresis behavior, in which the resistive hysteresis and rectifying ratio are dependent on the applied voltage and temperature. The resistive switching behavior of the BiFeO3 /ZnO thin film is shown to relate to the trap-controlled space charge limited conduction and interface-limited Fowler-Nordheim tunneling, while the polarization reversal takes place in the BiFeO3 layer of the heterostructure. The BiFeO3 /ZnO thin film is also demonstrated with a higher remanent polarization (2 Pr ∼ 153.6 μC/cm 2), a much lower dielectric loss (tan δ∼0.012), and a better fatigue endurance as compared to those of the BiFeO3 thin film without a ZnO buffer layer, where the much reduced leakage is largely responsible for the enhanced ferroelectric behavior. The ZnO as a buffer layer for BiFeO3 significantly changes the dielectric relaxation and conduction mechanisms, when the dielectric relaxation and electrical conduction are governed by the thermal excitation of carriers from the second-ionization and short-range motion of oxygen vacancies, respectively, while the relaxation process remains the same over the entire temperature range of 20 to 200 °C investigated in the present study. © 2010 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86851
ISSN: 00218979
DOI: 10.1063/1.3460108
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