Please use this identifier to cite or link to this item:
|Title:||ZnO as a buffer layer for growth of BiFeO3 thin films|
|Authors:||Wu, J. |
|Citation:||Wu, J., Wang, J. (2010-08-01). ZnO as a buffer layer for growth of BiFeO3 thin films. Journal of Applied Physics 108 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3460108|
|Abstract:||Multiferroic BiFeO3 thin film was grown on the ZnO-buffered Pt/TiO2/SiO2/Si (100) substrate by off-axis radio frequency magnetron sputtering, where the ZnO buffer layer gave rise to a strong (110) texture for the BiFeO3 thin film. The resulting BiFeO 3/ZnO thin film exhibits diode-like and resistive hysteresis behavior, in which the resistive hysteresis and rectifying ratio are dependent on the applied voltage and temperature. The resistive switching behavior of the BiFeO3 /ZnO thin film is shown to relate to the trap-controlled space charge limited conduction and interface-limited Fowler-Nordheim tunneling, while the polarization reversal takes place in the BiFeO3 layer of the heterostructure. The BiFeO3 /ZnO thin film is also demonstrated with a higher remanent polarization (2 Pr ∼ 153.6 μC/cm 2), a much lower dielectric loss (tan δ∼0.012), and a better fatigue endurance as compared to those of the BiFeO3 thin film without a ZnO buffer layer, where the much reduced leakage is largely responsible for the enhanced ferroelectric behavior. The ZnO as a buffer layer for BiFeO3 significantly changes the dielectric relaxation and conduction mechanisms, when the dielectric relaxation and electrical conduction are governed by the thermal excitation of carriers from the second-ionization and short-range motion of oxygen vacancies, respectively, while the relaxation process remains the same over the entire temperature range of 20 to 200 °C investigated in the present study. © 2010 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 12, 2018
WEB OF SCIENCETM
checked on Dec 3, 2018
checked on Nov 2, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.