Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.scriptamat.2012.02.031
Title: Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2
Authors: Bao, N.N. 
Yi, J.B.
Fan, H.M.
Qin, X.B.
Zhang, P.
Wang, B.Y.
Ding, J. 
Li, S.
Keywords: Diluted magnetic semiconductor
Room-temperature ferromagnetism
TiO 2
Vacancy
Issue Date: May-2012
Source: Bao, N.N., Yi, J.B., Fan, H.M., Qin, X.B., Zhang, P., Wang, B.Y., Ding, J., Li, S. (2012-05). Vacancy-induced room-temperature ferromagnetism in Ga-TiO 2. Scripta Materialia 66 (10) : 821-824. ScholarBank@NUS Repository. https://doi.org/10.1016/j.scriptamat.2012.02.031
Abstract: Ga-TiO 2 films were deposited by pulsed laser deposition. It is found that the as-deposited films demonstrate room-temperature ferromagnetism that depends on the doping concentration and oxygen partial pressure during the deposition processing. Analysis indicates that the ferromagnetism is not associated with the impurities, but with Ti vacancies, a finding that is verified by positron annihilation spectroscopy. In addition, the possible origins of the ferromagnetism appearing in TiO 2 doped with other elements that possess various valence states, such as Na, Mg, Sn, Ta and W, is discussed. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Source Title: Scripta Materialia
URI: http://scholarbank.nus.edu.sg/handle/10635/86836
ISSN: 13596462
DOI: 10.1016/j.scriptamat.2012.02.031
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