Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3276543
Title: Twinning rotation and ferroelectric behavior of epitaxial BiFeO3 (001) thin film
Authors: Liu, H.
Yang, P. 
Yao, K.
Wang, J. 
Issue Date: 2010
Source: Liu, H., Yang, P., Yao, K., Wang, J. (2010). Twinning rotation and ferroelectric behavior of epitaxial BiFeO3 (001) thin film. Applied Physics Letters 96 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3276543
Abstract: A twinning rotation structure is revealed by reciprocal space mappings obtained from synchrotron X-ray diffraction for the epitaxial BiFeO3 thin film that was grown on (001) SrTiO3 substrate. The lattice strain is not fully relaxed at a film thickness of 720 nm. The structure is indexed as a monoclinic with lattice parameters a=5.610 (1) Å, b=5.529 (1) Å, c=4.031 (1) Å, and Β=89.34 (1) °. The twinning rotation leads to an enhanced remanent polarization (2 Pr =164 μC/ cm 2, 2 Ec =510 kV/cm) and greatly reduced leakage current density of 1.2× 10-6 A/ cm2 at 100 kV/cm. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86825
ISSN: 00036951
DOI: 10.1063/1.3276543
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