Please use this identifier to cite or link to this item: https://doi.org/10.1002/cvde.200706645
Title: The influence of In/Cu ratio on electrical properties of CuO:In thin films prepared by plasma-enhanced CVD
Authors: Hao, Y.
Gong, H. 
Keywords: Amorphous
CuO:In
Cupric oxide
Resistivity
Thin film
XPS
Issue Date: Feb-2008
Source: Hao, Y., Gong, H. (2008-02). The influence of In/Cu ratio on electrical properties of CuO:In thin films prepared by plasma-enhanced CVD. Chemical Vapor Deposition 14 (1-2) : 9-13. ScholarBank@NUS Repository. https://doi.org/10.1002/cvde.200706645
Abstract: CuO:In thin films were prepared by plasma-enhanced chemical vapor deposition (CVD) with Cu(acac)2 and In(acac)3 precursors. A unique method or facility in vaporizing solid-state precursors and the transportation to the CVD reactor was described. The structure of the films evolved from nano-crystalline characteristic to amorphous state as the In/Cu atomic ratio of the mixed precursors increased from 0 to 0.25. A dependence of the resistivity of the films on the indium concentration was found. A low room-temperature resistivity of 7.35 Ω·cm was achieved for the sample of an In/Cu atomic ratio of 0.08, with an activation energy of 0.14 eV. X-ray photoelectron spectroscopy (XPS) study excluded the possibility that the increased conductivity of the samples came from a reduction of Cu2+ to Cu+. Positive holes (h.) induced by negatively charged defect complex (InCu . + V″Cu) were assumed to contribute to the increase of conductivity. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Source Title: Chemical Vapor Deposition
URI: http://scholarbank.nus.edu.sg/handle/10635/86790
ISSN: 09481907
DOI: 10.1002/cvde.200706645
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