Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssi.2010.09.011
Title: Simulated defect and interface engineering for high power Li electrode materials
Authors: Adams, S. 
Prasada Rao, R. 
Keywords: Bond valence analysis
Heterogeneous doping
LiFePO4
LiFeSO4F
Molecular dynamics simulation
Issue Date: 3-Mar-2011
Citation: Adams, S., Prasada Rao, R. (2011-03-03). Simulated defect and interface engineering for high power Li electrode materials. Solid State Ionics 184 (1) : 57-61. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssi.2010.09.011
Abstract: Correlations between the ionic conductivity and antisite disorder in low cost cathode materials (1D Li+ conducting LiFePO4 and quasi-1D LiFeSO4F) and the origin of the experimentally observed drastic conductivity enhancement in nanoscale heterostructures Li xFePO4:Li4P2O7 are explored by molecular dynamics (MD) simulations with a novel bond valence (BV) based force-field. Compared to bulk values, ionic conductivity in surface-modified LixFePO4 is enhanced by up to 3 orders of magnitude. Details of dynamic ion transport pathways are extracted by our BV transport pathway analysis applied to MD simulation trajectories. Besides heterogeneous doping by the redistribution of mobile ions across the interface, ion mobility varies as quantified via the extension of unoccupied accessible pathway regions. A layer-by-layer analysis indicates a maximum mobility close to the interface, but Li+ mobility remains enhanced even at the center of the simulated nanocrystals. Li+ diffusion in LiFeSO4F exhibits a pronounced anisotropy with a "superionic" zig-zag pathway parallel to [111] involving partially occupied Li sites. A notable long range ion diffusion rate can be maintained in macroscopic LiFeSO4F crystals due to the moderate activation energy for migration perpendicular to the channels. © 2010 Elsevier B.V. All rights reserved.
Source Title: Solid State Ionics
URI: http://scholarbank.nus.edu.sg/handle/10635/86706
ISSN: 01672738
DOI: 10.1016/j.ssi.2010.09.011
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