Please use this identifier to cite or link to this item: https://doi.org/106/17006
Title: Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping
Authors: Sun, J.
Yu, Z.
Huang, Y.
Xia, Y.
Lai, W.S.
Gong, H. 
Issue Date: 2014
Source: Sun, J., Yu, Z., Huang, Y., Xia, Y., Lai, W.S., Gong, H. (2014). Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping. EPL 106 (1) : -. ScholarBank@NUS Repository. https://doi.org/106/17006
Abstract: One big challenge in transparent conducting oxides (TCOs) is to achieve high conductivity and mobility at a low processing temperature. Although optimized conductivity has been achieved in indium zinc oxide (IZO) without doping, it is still interesting to find whether doping can improve conductivity of IZO further. In this paper, we report a low processing temperature achievement of high conductivity and mobility of IZO through yttrium (Y) doping. We found that with different Y doping levels, room temperature fabricated amorphous IZO (a-IZO) samples can be controlled to exhibit either metallic or semiconductor characteristics. Y2O3 is demonstrated to be an effective doping source to achieve conductivity 300% higher than the non-doped IZO sample. Anomalously improved mobility of certain Y 2O3-doped IZO samples compared with the non-doped IZO sample is found and analyzed. Besides, a low-temperature resistivity anomaly (semiconductor metal transition) phenomenon is observed and discussed. © Copyright 2014 EPLA.
Source Title: EPL
URI: http://scholarbank.nus.edu.sg/handle/10635/86701
ISSN: 12864854
DOI: 106/17006
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