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Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3264093
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dc.titleResistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure
dc.contributor.authorWu, J.
dc.contributor.authorLou, X.
dc.contributor.authorWang, Y.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:53:34Z
dc.date.available2014-10-07T09:53:34Z
dc.date.issued2010
dc.identifier.citationWu, J., Lou, X., Wang, Y., Wang, J. (2010). Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure. Electrochemical and Solid-State Letters 13 (2) : G9-G12. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3264093
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86681
dc.description.abstractBilayered BiFeO3 /ZnO thin films, which were grown on the SrRuO3 -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO3 /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO3 layers occurs. © 2009 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3264093
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1149/1.3264093
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume13
dc.description.issue2
dc.description.pageG9-G12
dc.description.codenESLEF
dc.identifier.isiut000272838700010
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