Please use this identifier to cite or link to this item:
|Title:||Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure|
|Authors:||Wu, J. |
|Citation:||Wu, J., Lou, X., Wang, Y., Wang, J. (2010). Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure. Electrochemical and Solid-State Letters 13 (2) : G9-G12. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3264093|
|Abstract:||Bilayered BiFeO3 /ZnO thin films, which were grown on the SrRuO3 -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO3 /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO3 layers occurs. © 2009 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 22, 2018
WEB OF SCIENCETM
checked on May 15, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.