Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3264093
Title: Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure
Authors: Wu, J. 
Lou, X. 
Wang, Y. 
Wang, J. 
Issue Date: 2010
Citation: Wu, J., Lou, X., Wang, Y., Wang, J. (2010). Resistive hysteresis and diodelike behavior of BiFeO3 /ZnO heterostructure. Electrochemical and Solid-State Letters 13 (2) : G9-G12. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3264093
Abstract: Bilayered BiFeO3 /ZnO thin films, which were grown on the SrRuO3 -buffered MgO(100) substrate by off-axis radio frequency magnetron sputtering, are investigated for their current-voltage relationships at varying voltages and temperatures. A resistive hysteresis and a diodelike behavior are observed for the bilayered BiFeO3 /ZnO thin films. The resistive hysteresis and the rectification ratio are enhanced with increasing electrical field and temperature. The observed behavior arises from the interfacial depletion layer and ferroelectric switching, where the charge coupling between the semiconducting ZnO and the ferroelectric BiFeO3 layers occurs. © 2009 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86681
ISSN: 10990062
DOI: 10.1149/1.3264093
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

15
checked on May 22, 2018

WEB OF SCIENCETM
Citations

17
checked on May 15, 2018

Page view(s)

22
checked on Mar 11, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.