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|Title:||Properties of p-type and n-type ZnO influenced by P concentration|
|Authors:||Hu, G. |
|Citation:||Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). Properties of p-type and n-type ZnO influenced by P concentration. Applied Physics Letters 89 (25) : -. ScholarBank@NUS Repository.|
|Abstract:||The electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n type to p type. At the same time, a redshift of the band gap energy is observed by using the photoluminescence spectroscopy and UV-visible spectrophotometer. X-ray diffraction results show that lattice spacings of ZnO increase with P concentration, which indicates that P substitutes O, and this leads to a lattice spacing increase and an optical band gap energy decrease. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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