Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3571450
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dc.titlePerpendicular anisotropy L 10 -FePt based pseudo spin valve with Ag spacer layer
dc.contributor.authorHo, P.
dc.contributor.authorHan, G.C.
dc.contributor.authorEvans, R.F.L.
dc.contributor.authorChantrell, R.W.
dc.contributor.authorChow, G.M.
dc.contributor.authorChen, J.S.
dc.date.accessioned2014-10-07T09:53:01Z
dc.date.available2014-10-07T09:53:01Z
dc.date.issued2011-03-28
dc.identifier.citationHo, P., Han, G.C., Evans, R.F.L., Chantrell, R.W., Chow, G.M., Chen, J.S. (2011-03-28). Perpendicular anisotropy L 10 -FePt based pseudo spin valve with Ag spacer layer. Applied Physics Letters 98 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3571450
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86636
dc.description.abstractThe effects of post-annealing temperature of the Ag spacer layer on the structural, magnetic, spin, and magneto-transport properties of perpendicular anisotropy pseudo spin valves L 10 -Fe50 Pt50 /Ag/L 10 -Fe50 Pt50 had been investigated. The Ag spacer layer was post-annealed at various temperatures of 300, 400, and 500°C. A giant magnetoresistance ratio of 1.1% and 2.2% was achieved at room temperature and 77 K, respectively, when Ag was post-annealed at 300°C. This was a significant improvement from the use of Au, Pt, and Pd spacer materials. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3571450
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3571450
dc.description.sourcetitleApplied Physics Letters
dc.description.volume98
dc.description.issue13
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000289153600042
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