Please use this identifier to cite or link to this item:
|Title:||Mechanism of room temperature ferromagnetism in ZnO doped with Al|
|Source:||Ma, Y.W., Ding, J., Yi, J.B., Zhang, H.T., Ng, C.M. (2009). Mechanism of room temperature ferromagnetism in ZnO doped with Al. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository.|
|Abstract:||ZnO recently receives extensive interest owing to its potential applications in the dilute magnetic semiconductor. In this work, Al was deposited onto the surface of ZnO film followed by high vacuum annealing. The film showed the room temperature ferromagnetism (RTF). The saturation magnetization (Ms) highly depends on both the thickness of the Al top layer and the thickness of the ZnO film. The RTF disappeared when the film was further annealed in air atmosphere. The detailed structure characterizations (x-ray diffraction and x-ray photoelectron spectroscopy) revealed that the RTF was associated with a charge transfer between Al and Zn. © 2009 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 27, 2018
WEB OF SCIENCETM
checked on Apr 16, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.