Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2104354
Title: Low-dark-current TiO2 MSM UV photodetectors with Pt schottky contacts
Authors: Huang, H.
Xie, Y.
Yang, W. 
Zhang, F.
Cai, J.
Wu, Z.
Keywords: Dark current
gain
photodetectors (PDs)
TiO2
Issue Date: Apr-2011
Citation: Huang, H., Xie, Y., Yang, W., Zhang, F., Cai, J., Wu, Z. (2011-04). Low-dark-current TiO2 MSM UV photodetectors with Pt schottky contacts. IEEE Electron Device Letters 32 (4) : 530-532. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2104354
Abstract: We report on the fabrication and characterization of very low-dark-current TiO2 metalsemiconductormetal ultraviolet (UV) photodetectors (PDs) with Pt Schottky contacts. The dark current of the PDs is merely 1.28 pA at a 5-V bias, which is much better than the previously reported data. The photoconductive gain is less than one for a bias of less than 10 V. The remarkable reduction of the dark current and the gain can be attributed to the combined effect of the large Schottky barrier height produced at the Pt/TiO 2 contacts and the high quality of the sputtered TiO2 films, such as low intrinsic carrier concentration, large grain size, and absence of oxygen vacancies. The PDs also display a high quantum efficiency and a large UV-to-visible rejection ratio of about three orders of magnitude. © 2011 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86504
ISSN: 07413106
DOI: 10.1109/LED.2011.2104354
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