Please use this identifier to cite or link to this item:
|Title:||Low partial pressure chemical vapor deposition of graphene on copper|
|Keywords:||Chemical vapor deposition|
low partial pressure
|Citation:||Sun, J., Lindvall, N., Cole, M.T., Angel, K.T.T., Wang, T., Teo, K.B.K., Chua, D.H.C., Liu, J., Yurgens, A. (2012-03). Low partial pressure chemical vapor deposition of graphene on copper. IEEE Transactions on Nanotechnology 11 (2) : 255-260. ScholarBank@NUS Repository. https://doi.org/10.1109/TNANO.2011.2160729|
|Abstract:||A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.|
|Source Title:||IEEE Transactions on Nanotechnology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 28, 2018
WEB OF SCIENCETM
checked on Apr 24, 2018
checked on May 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.