Please use this identifier to cite or link to this item: https://doi.org/10.1109/TNANO.2011.2160729
Title: Low partial pressure chemical vapor deposition of graphene on copper
Authors: Sun, J.
Lindvall, N.
Cole, M.T.
Angel, K.T.T.
Wang, T.
Teo, K.B.K.
Chua, D.H.C. 
Liu, J.
Yurgens, A.
Keywords: Chemical vapor deposition
graphene
low partial pressure
nanoelectronics
wet transfer
Issue Date: Mar-2012
Citation: Sun, J., Lindvall, N., Cole, M.T., Angel, K.T.T., Wang, T., Teo, K.B.K., Chua, D.H.C., Liu, J., Yurgens, A. (2012-03). Low partial pressure chemical vapor deposition of graphene on copper. IEEE Transactions on Nanotechnology 11 (2) : 255-260. ScholarBank@NUS Repository. https://doi.org/10.1109/TNANO.2011.2160729
Abstract: A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE.
Source Title: IEEE Transactions on Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/86500
ISSN: 1536125X
DOI: 10.1109/TNANO.2011.2160729
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