Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TNANO.2011.2160729
Title: | Low partial pressure chemical vapor deposition of graphene on copper | Authors: | Sun, J. Lindvall, N. Cole, M.T. Angel, K.T.T. Wang, T. Teo, K.B.K. Chua, D.H.C. Liu, J. Yurgens, A. |
Keywords: | Chemical vapor deposition graphene low partial pressure nanoelectronics wet transfer |
Issue Date: | Mar-2012 | Citation: | Sun, J., Lindvall, N., Cole, M.T., Angel, K.T.T., Wang, T., Teo, K.B.K., Chua, D.H.C., Liu, J., Yurgens, A. (2012-03). Low partial pressure chemical vapor deposition of graphene on copper. IEEE Transactions on Nanotechnology 11 (2) : 255-260. ScholarBank@NUS Repository. https://doi.org/10.1109/TNANO.2011.2160729 | Abstract: | A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. © 2011 IEEE. | Source Title: | IEEE Transactions on Nanotechnology | URI: | http://scholarbank.nus.edu.sg/handle/10635/86500 | ISSN: | 1536125X | DOI: | 10.1109/TNANO.2011.2160729 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.