Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3537918
Title: Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films
Authors: Xie, Y.
Huang, H.
Yang, W. 
Wu, Z.
Issue Date: 15-Jan-2011
Citation: Xie, Y., Huang, H., Yang, W., Wu, Z. (2011-01-15). Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films. Journal of Applied Physics 109 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3537918
Abstract: The titanium dioxide (TiO2) films prepared by sol-gel processing were used to fabricate metal-semiconductor-metal ultraviolet photodetectors. A very low dark current of 5.38 pA (current density of 3.84 nA/ cm2) at 5 V bias is obtained, which is ascribed to the high effective Schottky barrier between Au and TiO2 films. The x-ray photoelectron spectroscopy analysis demonstrates that the concentration of oxygen vacancies is very low in the surface of the TiO2 films, which is responsible for the high effective Schottky barrier. The devices exhibit a cutoff wavelength at about 380 nm and a large UV-to-visible rejection ratio (340 versus 400 nm) of three orders of magnitude. The peak responsivity of the devices is 17.5 A/W at 5 V bias, indicating the presence of internal photoconductive gain induced by desorption of oxygen on the TiO2 surface. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86498
ISSN: 00218979
DOI: 10.1063/1.3537918
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

33
checked on Dec 12, 2018

WEB OF SCIENCETM
Citations

25
checked on Dec 12, 2018

Page view(s)

53
checked on Dec 7, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.