Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.actamat.2006.01.017
Title: Level set simulation of dislocation dynamics in thin films
Authors: Quek, S.S.
Xiang, Y.
Zhang, Y.W. 
Srolovitz, D.J.
Lu, C.
Keywords: Dislocation dynamics
Simulation
Thin films
Issue Date: May-2006
Source: Quek, S.S., Xiang, Y., Zhang, Y.W., Srolovitz, D.J., Lu, C. (2006-05). Level set simulation of dislocation dynamics in thin films. Acta Materialia 54 (9) : 2371-2381. ScholarBank@NUS Repository. https://doi.org/10.1016/j.actamat.2006.01.017
Abstract: We develop a level set method-based, three-dimensional dislocation dynamics simulation method to describe the motion of dislocations in a heteroepitaxial thin film. The simulations accurately describe the elastic interactions of the dislocations, stress fields throughout the film and substrate, dislocation annihilation, and dislocation reactions. As an example application, we consider the expansion of dislocation half-loops in a Si1-ηGeη thin film on a Si substrate. The expansion of the loop(s) creates interfacial misfit dislocations connected to propagating threading segments. The simulations show cross-slip of screw segments from one (1 1 1) glide plane to another, topological changes, and thermodynamically favorable dislocation reactions. © 2006 Acta Materialia Inc.
Source Title: Acta Materialia
URI: http://scholarbank.nus.edu.sg/handle/10635/86492
ISSN: 13596454
DOI: 10.1016/j.actamat.2006.01.017
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