Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2006.878402
Title: Interfacial effects of MgO buffer layer on perpendicular anisotropy of L10 FePt films
Authors: Lim, B.C.
Chen, J.S. 
Chow, G.M. 
Keywords: Buffer layer
FePt
Interfacial effect
MgO
Issue Date: Oct-2006
Citation: Lim, B.C., Chen, J.S., Chow, G.M. (2006-10). Interfacial effects of MgO buffer layer on perpendicular anisotropy of L10 FePt films. IEEE Transactions on Magnetics 42 (10) : 3017-3019. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2006.878402
Abstract: MgO buffer layer in FePt perpendicular media blocked diffusion from the CrRu underlayer and promoted epitaxial growth of the FePt L10 film. The MgO layer deposited at 50°C appeared continuous and the interface roughness between MgO and FePt decreased with increasing thickness up to 4 nm. The predominant FePt (001) texture slightly improved with increasing MgO thickness. At 350°C, deposited MgO (2-nm thickness) was discontinuous and island-like. For 8-nm-thick MgO, the FePt (001) dominated and FePt (111) almost disappeared. Defects such as grain boundaries, twin boundaries, and interface roughness contributed to the high coercivity as a result of high deposition temperature or small MgO thickness. © 2006 IEEE.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/86459
ISSN: 00189464
DOI: 10.1109/TMAG.2006.878402
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