Please use this identifier to cite or link to this item:
|Title:||Influence of bias voltage on the switching behaviour of CoCrPt-Si O2 perpendicular recording media|
|Authors:||Li, W.M. |
|Citation:||Li, W.M., Shi, J.Z., Lim, W.K., Ding, J. (2013-05-08). Influence of bias voltage on the switching behaviour of CoCrPt-Si O2 perpendicular recording media. Journal of Physics D: Applied Physics 46 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/46/18/185001|
|Abstract:||A systematic investigation of the influence of negative substrate bias on the microstructure and magnetic switching behaviour of CoCrPt : SiO2 perpendicular recording media is performed by varying the negative bias voltage from 0 to 600 V during the deposition of a bottom Ru (or Ru : TiO 2SiO2) intermediate layer. The microscopic structures and the surface morphology are studied by a transmission electron microscope and an atomic force microscope. The crystallographic properties are studied by an x-ray diffractometer. Our observation shows that high biasing is at work to favour the formation of low-energy hexagonal close packed (0 0 2) planes, resulting in high crystallinity of Ru. Addition of oxide to the Ru intermediate layer leads to an increase in grain segregation, which results in a small grain diameter, but broad standard deviation and large surface roughness. Utilization of a bias voltage on the Ru oxide intermediate layer successfully improves the crystal texture of CoCrPt : SiO2 and induces high Hc, a narrow intrinsic switching field distribution and low Hcr45/Hcr0, while maintaining isolated grains and small grain size. © 2013 IOP Publishing Ltd.|
|Source Title:||Journal of Physics D: Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jul 9, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.