Please use this identifier to cite or link to this item:
Title: Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system
Authors: Sun, J.
Huang, Y.
Gong, H. 
Issue Date: 15-Jul-2011
Citation: Sun, J., Huang, Y., Gong, H. (2011-07-15). Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system. Journal of Applied Physics 110 (2) : -. ScholarBank@NUS Repository.
Abstract: The investigation of Al2O3 doped indium zinc oxide (83 cation % In-17 cation % Zn), denoted Al2O3-IZO, shows that the conductivity of certain amorphous Al2O3-IZO samples can be 752 S cm-1 with a mobility of 26.5 cm 2V-1s-1, 4 times higher than that of IZO (190 Scm-1) with an industrial standard indium and zinc atomic ratio of 83/17. Furthermore, by increasing Al2O3 content, strangely, Al2O3 doped IZO samples exhibit an unexpected high mobility trend for some of the Al2O3-IZO samples and a transport property change from semiconductor to metallic mechanism. The presence of minimum resistivity in the resistivity-temperature curve, denoted metal-semiconductor transition, is observed and interpreted through the quantum corrections to conductivity. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.3605547
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 15, 2019


checked on Jan 15, 2019

Page view(s)

checked on Dec 15, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.