Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3605547
Title: Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system
Authors: Sun, J.
Huang, Y.
Gong, H. 
Issue Date: 15-Jul-2011
Citation: Sun, J., Huang, Y., Gong, H. (2011-07-15). Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system. Journal of Applied Physics 110 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3605547
Abstract: The investigation of Al2O3 doped indium zinc oxide (83 cation % In-17 cation % Zn), denoted Al2O3-IZO, shows that the conductivity of certain amorphous Al2O3-IZO samples can be 752 S cm-1 with a mobility of 26.5 cm 2V-1s-1, 4 times higher than that of IZO (190 Scm-1) with an industrial standard indium and zinc atomic ratio of 83/17. Furthermore, by increasing Al2O3 content, strangely, Al2O3 doped IZO samples exhibit an unexpected high mobility trend for some of the Al2O3-IZO samples and a transport property change from semiconductor to metallic mechanism. The presence of minimum resistivity in the resistivity-temperature curve, denoted metal-semiconductor transition, is observed and interpreted through the quantum corrections to conductivity. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86438
ISSN: 00218979
DOI: 10.1063/1.3605547
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