Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssa.200723611
Title: GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates
Authors: Tripathy, S.
Vicknesh, S.
Wang, L.S.
Lin, V.K.X.
Oh, S.A.
Grover, R.
Zang, K.Y.
Arokiaraj, J.
Tan, J.N.
Kumar, B. 
Gong, H. 
Shannigrahi, S.R.
Ramam, A.
Chua, S.J.
Issue Date: May-2008
Source: Tripathy, S., Vicknesh, S., Wang, L.S., Lin, V.K.X., Oh, S.A., Grover, R., Zang, K.Y., Arokiaraj, J., Tan, J.N., Kumar, B., Gong, H., Shannigrahi, S.R., Ramam, A., Chua, S.J. (2008-05). GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates. Physica Status Solidi (A) Applications and Materials Science 205 (5) : 1168-1172. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.200723611
Abstract: Using a combination of selection dry etching techniques, surface micro-machined GaN and ZnO micromechanical structures are demonstrated on silicon-on-insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pluse etching with non-plasma xenon difluoride (XeF 2), which selectively etches the Si overlayer of SOI, thus under-cutting the wide bandgap semiconductor material on top. This method prevents crystal damage of overhanging wide bandgas semiconductor mechanical structures. The mechanical properties of these released microstructures are characterized by micro-Ramana spectroscopy. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Source Title: Physica Status Solidi (A) Applications and Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/86365
ISSN: 18626300
DOI: 10.1002/pssa.200723611
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