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Title: Ferromagnetic Cu doped ZnO as an electron injector in heterojunction light emitting diodes
Authors: Herng, T.S.
Lau, S.P.
Yu, S.F.
Tsang, S.H.
Teng, K.S.
Chen, J.S. 
Issue Date: 2008
Citation: Herng, T.S., Lau, S.P., Yu, S.F., Tsang, S.H., Teng, K.S., Chen, J.S. (2008). Ferromagnetic Cu doped ZnO as an electron injector in heterojunction light emitting diodes. Journal of Applied Physics 104 (10) : -. ScholarBank@NUS Repository.
Abstract: Ferromagnetic and highly conductive copper doped ZnO (ZnO:Cu) films were prepared by filtered cathodic vacuum arc technique. By employing a biasing technique during growth, the electron concentration and resistivity of the ZnO:Cu films can be as high as 1020 cm-3 and 5.2× 10-3 cm, respectively. The ferromagnetic behavior is observed in all the conductive films, but its magnetization is quenched with an increment in carrier concentration, suggesting that carrier induced exchange is not directly responsible for the ferromagnetism. Heterojunction light emitting diodes have been fabricated using the conductive ZnO:Cu layer as an electron injector and a p -type GaN as hole injector. Electroluminescence can be detected from the devices. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
Appears in Collections:Staff Publications

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