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|Title:||Ferroelectric behavior in bismuth ferrite thin films of different thickness|
|Citation:||Wu, J., Wang, J., Xiao, D., Zhu, J. (2011-09-28). Ferroelectric behavior in bismuth ferrite thin films of different thickness. ACS Applied Materials and Interfaces 3 (9) : 3261-3263. ScholarBank@NUS Repository. https://doi.org/10.1021/am200801u|
|Abstract:||The ferroelectric behavior of BiFeO3 thin films is modified by changing the film thicknesses, where the BiFeO3 thin films with different thicknesses were grown on SrRuO3/Pt/TiO2/ SiO2/Si(100) substrates by radio frequency sputtering. The mixture of (110) and (111) orientations is induced for all BiFeO3 thin films regardless of their thicknesses, together with the columnar structure and the dense microstructure. Their dielectric behavior is almost independent of the film thickness where all thin films have a low dielectric loss. A giant remanent polarization of 2Pr ≈ 156.6-188.8 μC/cm2 is induced for the BiFeO3 thin films in the thickness range of 190-600 nm. As a result, it is an effective way to improve the ferroelectric behavior of the BiFeO3 thin film by tailoring the film thickness. © 2011 American Chemical Society.|
|Source Title:||ACS Applied Materials and Interfaces|
|Appears in Collections:||Staff Publications|
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