Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.028206jes
Title: Fabrication of TiO 2CuSCN bulk heterojunctions by profile-controlled electrodeposition
Authors: Sun, L.
Huang, Y.
Anower Hossain, M.
Li, K.
Adams, S. 
Wang, Q. 
Issue Date: 2012
Citation: Sun, L., Huang, Y., Anower Hossain, M., Li, K., Adams, S., Wang, Q. (2012). Fabrication of TiO 2CuSCN bulk heterojunctions by profile-controlled electrodeposition. Journal of the Electrochemical Society 159 (5) : D323-D327. ScholarBank@NUS Repository. https://doi.org/10.1149/2.028206jes
Abstract: We demonstrate a facile bottom-up growth of CuSCN - a widely used hole conducting material, in mesoscopic TiO 2 films by electrodeposition in the presence of TiO 2 compact layer. The profile-controlled growth of CuSCN in the nanopores of mesoscopic TiO 2 is realized by judiciously optimizing the electrolyte concentration and applied potential, so that the effective electron diffusion length in TiO 2 is much shorter than film thickness and the electrodeposition is strictly confined within very narrow region from the conducting substrate. The TiO 2/CuSCN heterojunctions exhibit a pore filling ratio of ∼80% and show good rectifying properties, which is anticipated to be an important step forward to the facile fabrication of bulk heterojunction for nanostructured solar cells or 3D batteries. © 2012 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/86319
ISSN: 00134651
DOI: 10.1149/2.028206jes
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