Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3213335
Title: Effects of SrRuO3 buffer layer thickness on multiferroic (Bi0.90La0.10) (Fe0.95Mn0.05) O 3 thin films
Authors: Wu, J. 
Wang, J. 
Issue Date: 2009
Citation: Wu, J., Wang, J. (2009). Effects of SrRuO3 buffer layer thickness on multiferroic (Bi0.90La0.10) (Fe0.95Mn0.05) O 3 thin films. Journal of Applied Physics 106 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3213335
Abstract: Multiferroic (Bi0.90La0.10) (Fe0.95Mn 0.05) O3 (BLFMO) thin films were deposited on SrRuO 3 (SRO) buffered Pt/ TiO2 / SiO2 /Si (100) substrates with variable buffer layer thicknesses by using off-axis radio frequency sputtering. The orientation of BLFMO thin films is dependent on the SRO buffer layer thickness, which leads to a change in ferroelectric behavior. Due to the low leakage currents arising from the orientation change in association with the variation in SRO buffer layer thickness and the La and Mn codoping, well saturated P-E hysteresis loops (2 Pr ∼210.0 μC/ cm2 and 2 Ec ∼525.5 kV/cm) are shown for the (111)-oriented BLFMO thin film at room temperature and 1 kHz. It also demonstrates little ferroelectric fatigue on 109 switching cycles. Moreover, the BLFMO thin film exhibits the enhanced magnetic behavior as compared to pure BFO thin films, due to the canting of antiferromagnetically ordered spins. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86281
ISSN: 00218979
DOI: 10.1063/1.3213335
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