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|Title:||Effect of zn concentration on multiferroic and fatigue behavior of Bi 0.90 La0.10 Fe1-x Znx O3 thin films|
|Authors:||Wu, J. |
|Citation:||Wu, J., Wang, J. (2010). Effect of zn concentration on multiferroic and fatigue behavior of Bi 0.90 La0.10 Fe1-x Znx O3 thin films. Electrochemical and Solid-State Letters 13 (12) : G105-G107. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3490762|
|Abstract:||Multiferroic and fatigue behaviors of Bi0.90 La0.10 Fe1-x Znx O3 (BLFZO-x) thin films grown in situ on SrRuO3/Pt/TiO2/SiO2/Si(100) substrates by radio frequency sputtering are dependent on Zn content. Their dielectric permittivity shows a linear increase with increasing Zn content and the fatigue endurance slightly decreases at x≤0.10. However, an excess amount of Zn (x=15%) degraded the electrical behavior due to an obvious increase in oxygen vacancies caused by Zn2+ substitution for Fe3+. The BLFZO-0.10 thin film exhibits optimized ferroelectric behavior (2 Pr ∼145.06 μC/cm2) among the film compositions investigated. The Ms value decreases with increasing Zn content due to the increase in nonmagnetic Zn in bismuth ferrite. © 2010 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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