Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssr.201105129
Title: Effect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films
Authors: Wu, J. 
Wang, J. 
Xiao, D.
Zhu, J.
Keywords: Bismuth ferrite
Electrical properties
Ferroelectrics
Leakage mechanism
Thin films
Issue Date: Jun-2011
Citation: Wu, J., Wang, J., Xiao, D., Zhu, J. (2011-06). Effect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films. Physica Status Solidi - Rapid Research Letters 5 (5-6) : 190-192. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201105129
Abstract: The effect of oxygen content during sputtering on the leakage mechanism and the ferroelectric properties of BiFeO3 with a sintering aid of CuO (CuO-BFO) was investigated, where all thin films with (100) orientation were grown on SrRuO3/LaAlO3(100) substrates by radio frequency sputtering with an oxygen content of 0-40%. The ferroelectric properties in CuO-BFO are tailored by changing the oxygen content during sputtering, indicating a small growth window. The Schottky emission dominates the leakage behavior regardless of oxygen content. The thin film with an oxygen content of ∼20% during sputtering has a higher remanent polarization of 2Pr ∼ 184.7 μC/cm2, due to its lower leakage current density and an improved phase purity. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) In this Letter, BiFeO3 thin films with a sintering aid of CuO (CuO-BFO) were investigated. Schottky emission is involved in their leakage mechanism regardless of the oxygen content during sputtering. In contrast, the remanent polarization of CuO-BFO thin films is strongly dependent on the oxygen content during sputtering, where a higher remanent polarization of 2Pr ∼ 184.7 μC/cm2 is induced for the thin film with an oxygen content of ∼20% during sputtering. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi - Rapid Research Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86270
ISSN: 18626254
DOI: 10.1002/pssr.201105129
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