Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/86045
Title: On the relative contribution of temperature, moisture and vapor pressure to delamination in a plastic IC package during lead-free solder reflow
Authors: Guojun, H.
Tay, A.A.O. 
Issue Date: 2005
Citation: Guojun, H.,Tay, A.A.O. (2005). On the relative contribution of temperature, moisture and vapor pressure to delamination in a plastic IC package during lead-free solder reflow. Proceedings - Electronic Components and Technology Conference 1 : 172-178. ScholarBank@NUS Repository.
Abstract: The elimination of lead in electronics assembly has presented challenges on the process. During the conventional eutectic tin-lead solder reflow process, the delamination of the interface between the leadframe pad and the encapsulant has been found to be a precursor to the popcorning of plastic IC packages. The melting point of lead-free solder is more than 30-40°C higher than that of eutectic tin-lead solder, which will require much higher peak reflow temperatures. Compared with the delamination during conventional lead-containing solder reflow process, the delamination problem would be expected to become more severe during a lead-free solder reflow process as the process temperature is higher and the thermo-mechanical stress caused by the CTE mismatch is larger than those during a eutectic solder reflow process. In this paper the entire thermal and moisture history of a plastic IC package is simulated from the start of level 1 moisture preconditioning to subsequent exposure to a leadfree solder reflow process lasting about 8 minutes. The transient development of the strain energy release rate due to thermal stress only G t, hygrostress only G h , vapor pressure only G p and combined total strain energy release rate G tot are computed and studied using the Modified Crack Surface Displacement Extrapolation Method (MCSDEM). Finite element models were constructed for a 160-leaded PQFP package. The initial crack length was varied from 0.1 mm to 3.5 mm to study the effect of crack size on the relative contributions of G t, G h and G p. © 2005 IEEE.
Source Title: Proceedings - Electronic Components and Technology Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/86045
ISSN: 05695503
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