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|Title:||The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy|
|Citation:||Du, Y., Kumar, A., Pan, H., Zeng, K., Wang, S., Yang, P., Wee, A.T.S. (2013). The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy. AIP Advances 3 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4818119|
|Abstract:||The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon. © 2013 © 2013 Author(s).|
|Source Title:||AIP Advances|
|Appears in Collections:||Staff Publications|
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