Please use this identifier to cite or link to this item:
|Title:||The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy|
|Citation:||Du, Y., Kumar, A., Pan, H., Zeng, K., Wang, S., Yang, P., Wee, A.T.S. (2013). The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy. AIP Advances 3 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4818119|
|Abstract:||The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon. © 2013 © 2013 Author(s).|
|Source Title:||AIP Advances|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 18, 2018
WEB OF SCIENCETM
checked on Oct 2, 2018
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.