Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4818119
Title: The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy
Authors: Du, Y.
Kumar, A.
Pan, H.
Zeng, K. 
Wang, S.
Yang, P. 
Wee, A.T.S. 
Issue Date: 2013
Citation: Du, Y., Kumar, A., Pan, H., Zeng, K., Wang, S., Yang, P., Wee, A.T.S. (2013). The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy. AIP Advances 3 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4818119
Abstract: The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon. © 2013 © 2013 Author(s).
Source Title: AIP Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/85776
ISSN: 21583226
DOI: 10.1063/1.4818119
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