Please use this identifier to cite or link to this item:
|Title:||Surface roughness measurement of semi-conductor wafers using a modified total integrated scattering model|
|Authors:||Tay, C.J. |
Total integrated scattering (TIS)
|Citation:||Tay, C.J.,Wang, S.H.,Quan, C.,Ng, C.K. (2002). Surface roughness measurement of semi-conductor wafers using a modified total integrated scattering model. Optik (Jena) 113 (7) : 317-321. ScholarBank@NUS Repository.|
|Abstract:||Light scattering is a non-contact technique which can be used for characterizing the topography of smooth reflecting surfaces. A proposed technique which incorporates a modified Total Integrated Scattering (TIS) model for surface roughness measurement of semi-conductor wafers has been developed. The technique employs a low power He-Ne laser and incorporates conventional optical components to record surface roughness in the nanometer range (Ra < 45 nm) with a high degree of accuracy. Principle of the technique and the experimental arrangement are described. Results obtained using the proposed technique are compared with those using the conventional direct contact method.|
|Source Title:||Optik (Jena)|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.