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|Title:||Surface passivation of (100)-oriented GaAs with ultrathin fluoropolymer films deposited by radio frequency magnetron sputtering of poly(tetrafluoroethylene)|
|Authors:||Zhang, Y. |
|Citation:||Zhang, Y., Kang, E.T., Neoh, K.G., Ang, S.S., Huan, A.C.H. (2003-03). Surface passivation of (100)-oriented GaAs with ultrathin fluoropolymer films deposited by radio frequency magnetron sputtering of poly(tetrafluoroethylene). Journal of the Electrochemical Society 150 (3) : F53-F59. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1545466|
|Abstract:||Ultrathin fluoropolymer films of about 4 nm in thickness were deposited on the HCl-etched (100)-oriented GaAs single-crystal substrates via radio frequency plasma sputtering of a poly(tetrafluoroethylene) (PTFE) target. X-ray photoelectron spectroscopy (XPS) results indicated that the sputter-deposited PTFE (s-PTFE) ultrathin film, having a dielectric constant comparable to that of the PTFE film (κ ∼ 2.1), could effectively passivate the HCl-etched GaAs(100) substrate under various environments. The growth of the oxide layer was effectively hindered by the s-PTFE barrier when the HCl-etched GaAs(100) surface was exposured to air for several hundred hours. The surface oxidation rate was also reduced significantly in the presence of the s-PTFE barrier when the HCl-etched GaAs(100) was exposed to water and the H2O2 solution. XPS and time-of-flight secondary mass spectrometry results indicated that the deposited s-PTFE film was oxygen-free and consisted of -(CF2)n- units with different end groups. The 180° peel adhesion test results suggested that the s-PTFE film adhered strongly to the GaAs(100) surface.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
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