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|Title:||Surface modification of polyimide films via plasma-enhanced chemical vapor deposition of thin silica and nitride films|
|Citation:||Li, H., Sharma, R.K., Zhang, Y., Tay, A.A.O., Kang, E.T., Neoh, K.G. (2003-08-19). Surface modification of polyimide films via plasma-enhanced chemical vapor deposition of thin silica and nitride films. Langmuir 19 (17) : 6845-6850. ScholarBank@NUS Repository. https://doi.org/10.1021/la0344074|
|Abstract:||Silicon oxide (SiOx) and silicon nitride (SixN y) thin films of different thicknesses were deposited on the polyimide (PI, Kapton HN) film surfaces via plasma-enhanced chemical vapor deposition (PECVD). The silica films were prepared from two types of gaseous mixtures, including (1) tetraethyl orthosilicate (Teos) and O2 and (2) SiH4 and N2O, while the nitride film was from the gaseous mixture of SiH4, NH3, and N2. Characterization of the silica and nitride ultrathin films (∼ 3 nm) on the PI substrates via X-ray photoelectron spectroscopy (XPS) revealed the presence of chemical interaction between the passivating layer and the underlying PI surface. The deposited silica and nitride films were found to enhance the dynamic surface microhardness of the PI films. The extent of enhancement was dependent on the thickness and the type of the deposited films. The 180°-peel adhesion strength measurements revealed that the deposited silica and nitride films adhered strongly to the PI substrates.|
|Appears in Collections:||Staff Publications|
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