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|Title:||Study of titanium suicide formation using spike anneal for integrated chip manufacturing|
|Citation:||Tan, C.C.,Lu, L.,Lai, C.W.,See, A.,Chan, L.H. (2003-03). Study of titanium suicide formation using spike anneal for integrated chip manufacturing. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 767-774. ScholarBank@NUS Repository.|
|Abstract:||A discussion about titanium silicide formation by spike anneal for integrated chip manufacturing was presented. The results showed that the one-step rapid thermal annealing (RTA) Salicide process was possible for larger linewidth devices using spike anneal. The analysis suggested that high-temperature spike resulted in higher rate of nucleation and C54-TiSi2 grains during RTA.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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