Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/85689
Title: Study of titanium suicide formation using spike anneal for integrated chip manufacturing
Authors: Tan, C.C.
Lu, L. 
Lai, C.W.
See, A.
Chan, L.H.
Issue Date: Mar-2003
Source: Tan, C.C.,Lu, L.,Lai, C.W.,See, A.,Chan, L.H. (2003-03). Study of titanium suicide formation using spike anneal for integrated chip manufacturing. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 767-774. ScholarBank@NUS Repository.
Abstract: A discussion about titanium silicide formation by spike anneal for integrated chip manufacturing was presented. The results showed that the one-step rapid thermal annealing (RTA) Salicide process was possible for larger linewidth devices using spike anneal. The analysis suggested that high-temperature spike resulted in higher rate of nucleation and C54-TiSi2 grains during RTA.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/85689
ISSN: 10711023
Appears in Collections:Staff Publications

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