Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2435625
Title: Pore sealing by NH3 plasma treatment of porous low dielectric constant films
Authors: Peng, H.-G.
Chi, D.-Z.
Wang, W.-D.
Li, J.-H.
Zeng, K.-Y. 
Vallery, R.S.
Frieze, W.E.
Skalsey, M.A.
Gidley, D.W.
Yee, A.F.
Issue Date: 2007
Citation: Peng, H.-G., Chi, D.-Z., Wang, W.-D., Li, J.-H., Zeng, K.-Y., Vallery, R.S., Frieze, W.E., Skalsey, M.A., Gidley, D.W., Yee, A.F. (2007). Pore sealing by NH3 plasma treatment of porous low dielectric constant films. Journal of the Electrochemical Society 154 (4) : G85-G94. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2435625
Abstract: Porous interlayer dielectric films with interconnected pores pose a serious challenge for their integration into next-generation microchips. The opening of interconnected pores in the surface region needs to be sealed to prevent intrusion of atomic layer deposition precursors used to create metal diffusion barriers. In this paper, we report the formation of a thin, nonporous surface layer on a porous methyl-silsesquioxane-based dielectric film by NH3 plasma treatment. Depth-profiled beam positronium annihilation lifetime spectroscopy was applied to conveniently examine the formation of the dense layer. A nonporous surface layer was readily identified by the curtailment of positronium escape into vacuum through the surface. Among plasma treatments at temperatures ranging from 25 to 300°C for duration of 3-600 s, the best result was achieved at 300°C for 10 s. A very thin skin layer, ∼10 nm, could be formed with little damage to the bulk of the low- κ film. This thin skin layer further proved to improve the performance of Ta barriers for Cu diffusion. Chemical analysis, infrared spectroscopy, and sputtering secondary ion mass spectroscopy were also performed to examine how the plasma treatment altered the dielectric film. © 2007 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/85560
ISSN: 00134651
DOI: 10.1149/1.2435625
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

30
checked on Dec 11, 2018

WEB OF SCIENCETM
Citations

27
checked on Dec 3, 2018

Page view(s)

41
checked on Nov 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.