Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.04.043
Title: Pb(Zr0.52Ti0.48)O3/TiNi multilayered heterostructures on Si substrates for smart systems
Authors: Zhu, T.J.
Zhao, X.B.
Lu, L. 
Keywords: Ferroelectric properties
Ferroelectrics
Pulsed laser deposition
Shape memory alloy
Thin films
Issue Date: 5-Dec-2006
Citation: Zhu, T.J., Zhao, X.B., Lu, L. (2006-12-05). Pb(Zr0.52Ti0.48)O3/TiNi multilayered heterostructures on Si substrates for smart systems. Thin Solid Films 515 (4) : 1445-1449. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.04.043
Abstract: Ferroelectric/shape memory alloy thin film multilayered heterostructures possess both sensing and actuating functions and are considered to be smart. In this article, Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films and Ti-riched TiNi shape memory alloy thin films have been deposited on Si and SiO2/Si substrates in the 400-600 °C temperature range by pulsed laser deposition technique. Deposition processing, microstructure and surface morphology of these films are described. The TiNi films deposited at 500 °C had an austenitic B2 structure with preferred (110) orientation. The surfaces of the films were very smooth with the root-mean-square roughness on a unit cell level. The structure of the TiNi films had a significant influence on that of the subsequently deposited PZT films. The single B2 austenite phase of the TiNi favored the growth of perovskite PZT films. The PZT/TiNi heterostructures with the PZT and TiNi films respectively deposited at 600 and 500 °C exhibited a polarization-electric field hysteresis behavior with a leakage current of about 2 × 10- 6 A/cm2. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/85537
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.04.043
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