Please use this identifier to cite or link to this item:
|Title:||Pb(Zr0.52Ti0.48)O3/TiNi multilayered heterostructures on Si substrates for smart systems|
Pulsed laser deposition
Shape memory alloy
|Source:||Zhu, T.J., Zhao, X.B., Lu, L. (2006-12-05). Pb(Zr0.52Ti0.48)O3/TiNi multilayered heterostructures on Si substrates for smart systems. Thin Solid Films 515 (4) : 1445-1449. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.04.043|
|Abstract:||Ferroelectric/shape memory alloy thin film multilayered heterostructures possess both sensing and actuating functions and are considered to be smart. In this article, Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films and Ti-riched TiNi shape memory alloy thin films have been deposited on Si and SiO2/Si substrates in the 400-600 °C temperature range by pulsed laser deposition technique. Deposition processing, microstructure and surface morphology of these films are described. The TiNi films deposited at 500 °C had an austenitic B2 structure with preferred (110) orientation. The surfaces of the films were very smooth with the root-mean-square roughness on a unit cell level. The structure of the TiNi films had a significant influence on that of the subsequently deposited PZT films. The single B2 austenite phase of the TiNi favored the growth of perovskite PZT films. The PZT/TiNi heterostructures with the PZT and TiNi films respectively deposited at 600 and 500 °C exhibited a polarization-electric field hysteresis behavior with a leakage current of about 2 × 10- 6 A/cm2. © 2006 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2018
WEB OF SCIENCETM
checked on Jan 16, 2018
checked on Feb 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.