Please use this identifier to cite or link to this item:
|Title:||Oxide nanowire networks and their electronic and optoelectronic characteristics|
|Citation:||Mathews, N., Varghese, B., Sun, C., Thavasi, V., Andreasson, B.P., Sow, C.H., Ramakrishna, S., Mhaisalkar, S.G. (2010-10). Oxide nanowire networks and their electronic and optoelectronic characteristics. Nanoscale 2 (10) : 1984-1998. ScholarBank@NUS Repository. https://doi.org/10.1039/c0nr00285b|
|Abstract:||Oxide nanowire networks or oxide nanonets leverage some of the exceptional functionalities of one-dimensional nanomaterials along with the fault tolerance and flexibility of interconnected nanowires to creating exciting opportunities in large-area electronics as well as green energy systems. This paper reviews the electronic and optoelectronic properties of these networks and highlights their potential applications in field-effect transistors, optoelectronic devices, and solar cells. Techniques to grow nanowires and their subsequent integration into networks using contact printing and electrospinning are described. Electrical properties of field-effect transistors fabricated from contact printed nanowire networks are discussed, and means of integration of the nanowire networks of heterogenous materials that enable ambipolar device operation are outlined. Photocurrent properties of these nanowires are described, including the dye sensitization of large-bandgap SnO2 nanowires. The final section deals with the advantages of employing nanowire networks in dye-sensitized solar cells and the dependence of solar cell performance on morphology and surface area. © The Royal Society of Chemistry 2010.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 16, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on May 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.